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Brush plated ZnS films and their properties
Authors:K.R.Murali   A. Clara Dhanemozhi  Rita John
Affiliation:aElectrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630006, India;bDepartment of Physics, J.A. College for Women (Autonomous), Periakulam, India;cDepartment of Physics, Mother Teresa Women's University, Kodaikanal, India
Abstract:
Zinc sulphide thin films were deposited by the brush plating technique using AR grade zinc sulphate and sodium thiosulphate on titanium and conducting glass substrates at a current density of 80 mA cm−2 and at different deposition temperatures in the range 30–80 °C. The films exhibited cubic structure. Band gap of the films were in the range of 3.79–3.93 eV. Auger spectra of the ZnS films deposited at different current densities indicated that the Zn/S ratio varies in the range of 1.02–1.04. Room temperature PL spectrum of the films deposited at 80 °C indicated two emission peaks at 420 and 480 nm for an excitation of 325 nm. Resistivity of the film varied from 200–769 Ω cm as the deposition temperature increased.
Keywords:Thin films   Semiconductors   Chemical synthesis   X-ray diffraction   Luminescence
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