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Effect of thermal annealing on the properties of a-SiCN:H films by hot wire chemical vapor deposition using hexamethyldisilazane |
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| Authors: | Amornrat Limmanee Michio Otsubo Takehiko Sato Akira Yamada |
| Affiliation: | a Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan b Material & Processing Technology Department, Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1-57, Miyashimo, Sagamihara-City, Kanagawa, 229-1195, Japan c Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan |
| Abstract: | We investigated the effect of thermal annealing on the properties of a-SiCN:H films prepared by HWCVD using hexamethyldisilazane focusing on the change in the passivation quality. We found that annealing a-SiCN:H films at the temperature around 600 °C led to an effective hydrogen diffusion, resulting in the enhancement of the passivation effect. The performance of cast polycrystalline silicon solar cells using a-SiCN:H films showed a strong dependence on the contact firing temperature. The best efficiency of 13.75% was achieved at the firing temperature of 750 °C. |
| Keywords: | SiCN:H film Hexamethyldisilazane Hot-wire CVD Passivation layer Antireflection coating Silicon solar cells |
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