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Lithographic patterning of benzoylacetone modified SnO2 and SnO2:Sb thin films |
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| Authors: | Terho Kololuoma, Ari H. O. K rkk inen, Ari Tolonen,Juha T. Rantala |
| Affiliation: | a VTT Electronics, Kaitoväylä 1, FIN-90570, Oulu, Finland b Department of Chemistry, University of Oulu, P.O. Box 3000, FIN-90014, Oulu Yliopisto, Finland |
| Abstract: | The synthesis of directly UV-photopatternable pure and antimony-doped organo-tin materials is presented. UV-photopatternability has been achieved by using the synthesized benzoylacetone modified tin and antimony 2-isopropoxyethoxides. Photopatterned pure and antimony-doped organo-tin films are crystallized by thermal annealing in order to obtain conductive SnO2 and Sb:SnO2 thin films. The molar ratio between benzoylacetone and metal alkoxides has to be 2 in order to obtain crack-free, good-quality structures. The effects of UV-irradiation, increasing antimony doping level and benzoylacetone concentration on the electrical properties of the single-layered films are analyzed. The highest obtained conductivity was 20 S/cm. Benzoylacetone concentration and UV-irradiation has only a negligible effect on the film electrical conductivities. |
| Keywords: | Antimony-doped tin dioxide Direct photopatterning Electrical properties |
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