| MOCVD生长的CdZnTe／ZnTe多量子附的激子光学特性 |
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| 引用本文： | 栗红玉,申德振,杨宝均,郑著宏,范希武.MOCVD生长的CdZnTe／ZnTe多量子附的激子光学特性[J].光电子．激光,1996(4). |
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| 作者姓名： | 栗红玉 申德振 杨宝均 郑著宏 范希武 |
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| 作者单位： | 中国科学院长春物理所激发态开放实验室 |
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| 摘 要： | 用常压ＭＯＣＶＤ方法在ＧａＡｓ（１００）衬底上生长了ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱。在室温下，观测到了ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱的三个谱带发光。根据ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱的吸收光谱和不同激发光强下的发光光谱，分别归结ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱中观测到的三个发光谱带于覆盖层发光、ｎ＝１的重空穴激子发光及杂质发光。
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^Excition Optical Properties in CdZnTe / ZnTe Multiple Quantum Wells Grown by MOCVD |
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| Li Hongyu,Shen Dezhen,Yang Baojnn,Zheng ZhunhongChen Lianchun,Fan Xiwu.^Excition Optical Properties in CdZnTe / ZnTe Multiple Quantum Wells Grown by MOCVD[J].Journal of Optoelectronics·laser,1996(4). |
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| Authors: | Li Hongyu Shen Dezhen Yang Baojnn Zheng ZhunhongChen Lianchun Fan Xiwu |
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| Abstract: | Excition optical properties in CdZnTe/ ZnTe multiple quantum wells(MQWs) grown by mefalorganic chemical vapour deposifion (MOCVD) has been studied for the first fime. Three luminescence peaks in CdZnTe/ ZnTe MQWs are observed in photoluminescence spectrum at room temperature. The experimental results indicate that they are dueto the luminescences of cover. (n-1)heavy-hole excition and impurity in the CdZnTe / ZnTe MQWs, respectively. |
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| Keywords: | CdZnTe / ZnTe MQWs excitonic photoluminescence MOCVD |
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