W-band divide-by-3 frequency divider using 0.1 /spl mu/m InAlAs/InGaAs metamorphic HEMT technology |
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| Authors: | Jeong J Kim S Choi W Noh H Lee K Seo K-S Kwon Y |
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| Affiliation: | Seoul Nat. Univ., South Korea; |
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| Abstract: | A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW. |
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