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Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy |
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| Authors: | B. A. Andreev N. A. Sobolev D. V. Denisov E. I. Shek |
| Affiliation: | 2. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod, 603600, Russia 1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
| Abstract: | The photoluminescence spectra of light-emitting structures based on silicon doped with erbium during the course of molecular-beam epitaxy at a temperature of 500°C are studied at 4.2 K on being annealed at 800–900°C. Three sets of lines belonging to the emitting centers of erbium in silicon with a low oxygen-impurity concentration are revealed. |
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