| 溅射功率对Zr,Al共掺杂ZnO薄膜结构和性能的影响 |
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| 引用本文： | 袁玉珍,王辉,刘汉法,张化福,刘云燕. 溅射功率对Zr,Al共掺杂ZnO薄膜结构和性能的影响[J]. 电子元件与材料, 2010, 29(2). DOI: 10.3969/j.issn.1001-2028.2010.02.015 |
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| 作者姓名： | 袁玉珍 王辉 刘汉法 张化福 刘云燕 |
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| 作者单位： | 山东理工大学,理学院,山东,淄博,255049;山东理工大学,理学院,山东,淄博,255049;山东理工大学,材料科学与工程学院,山东,淄博,255049 |
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| 基金项目： | 山东省自然科学基金资助项目(No.ZR2009AL017);;山东理工大学“功能材料”创新研究团队资助项目(No.CX0602) |
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| 摘 要： | 室温下,采用直流磁控溅射法,在载玻片衬底上制备出了Zr,Al共掺杂ZnO(AZZO)透明导电薄膜。研究了溅射功率对薄膜的组织结构、表面形貌和光电学性能的影响。结果表明,制备的AZZO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。当溅射功率为150W时,薄膜电阻率达到最小值1.66×10–3Ω·cm,在可见光区平均透过率超过93%。
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| 关 键 词： | 磁控溅射 Zr Al共掺杂 ZnO 溅射功率 透明导电薄膜 |
Effects of sputtering power on the structure and photoelectrical properties of Zr, Al co-doped ZnO thin films |
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| YUAN Yuzhen,WANG Hui,LIU Hanfa,ZHANG Huafu,LIU Yunyan. Effects of sputtering power on the structure and photoelectrical properties of Zr, Al co-doped ZnO thin films[J]. Electronic Components & Materials, 2010, 29(2). DOI: 10.3969/j.issn.1001-2028.2010.02.015 |
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| Authors: | YUAN Yuzhen WANG Hui LIU Hanfa ZHANG Huafu LIU Yunyan |
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| Affiliation: | 1.School of Science;Shandong University of Technology;Zibo 255049;Shandong Province;China;2. School of Materials Science and Engineering;China |
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| Abstract: | Transparent conducting Zr, Al co-doped ZnO (AZZO) thin films were deposited on slide glass substrate by DC magnetron sputtering at room temperature. The effects of sputtering power on the structure, surface morphology and photoelectrical properties of ZnO thin films were studied. The results show that all the prepared AZZO films are polycrystalline films with hexagonal wurtzite structure and a c-axis preference. When the applied sputtering power is 150 W, the resistivity of prepared films reaches the smalle... |
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| Keywords: | magnetron sputtering Zr Al co-doped ZnO sputtering power transparent conducting thin film |
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