Selective area growth and characterization of AlGaN/GaNheterojunction bipolar transistors by metalorganic chemical vapordeposition |
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| Authors: | Shelton B.S. Lambert D.J.H. Jian Jang Huang Wong M.M. Chowdhury U. Ting Gang Zhu Kwon H.K. Liliental-Weber Z. Benarama M. Feng M. Dupuis R.D. |
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| Affiliation: | Emcore Corp., Somerset, NJ; |
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| Abstract: | The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described and analyzed. Transistors based on group III-nitride material are attractive for high-power and high-temperature applications. Much work has been focused on improving p-type material, as well as heterojunction interfaces. However, there have been very few reports on HBTs operating at room temperature, At this time, current gains for nitride-based HBTs have been limited to ~10. Selective area regrowth was applied to the growth of AlGaN/GaN HBTs to analyze its potential advantages as compared to more traditional growth techniques in order to realize improved electrical performance of the devices |
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