a Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso, Nagoya 466, Japan
b Department of Material Science and Engineering, Nagoya Institute of Technology, Gokiso, Nagoya 466, Japan
Abstract:
A novel discrete model is proposed for studying the aggregation process on the surface of bilayer films. The present modelling is based on a two-dimensional biased random walk model. Simulation results based on the model exhibit the interesting aggregation dynamics to reproduce the experimental results of scanning electron microscope observation of the pattern evolution of Si aggregates on the free surface of the upper Ag-layer during annealing of Ag/Si bilayer film on the SiO2 substrate.