GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laserdiodes |
| |
| Authors: | Larson MC Kondow M Kitatani T Nakahara K Tamura K Inoue H Uomi K |
| |
| Affiliation: | Central Res. Lab., Hitachi Ltd., Tokyo; |
| |
| Abstract: | Vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well (QW) active layers are demonstrated for the first time. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Room-temperature (RT) pulsed operation is achieved, with an active wavelength near 1.18 μm, threshold current density of 3.1 kA/cm2, slope efficiency of ~0.04 W/A, and output power above 5 mW for 45-μm-diameter devices. Laser oscillation is observed for temperatures at high as 95°C |
| |
| Keywords: | |
|
|
