| NMOS器件两次沟道注入杂质分布和阈电压计算 |
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| 引用本文： | 王纪民,蒋志.NMOS器件两次沟道注入杂质分布和阈电压计算[J].微电子学,1997,27(2):121-124. |
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| 作者姓名： | 王纪民 蒋志 |
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| 作者单位： | 清华大学微电子学研究所 |
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| 摘 要： | 分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。
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| 关 键 词： | 离子注入 开启电压 NMOS器件 |
A Study on the Impurity Profile and Threshold Calculation for MOSFETs with Double Implantations |
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| WANG Jimin,JIANG Zhi,LI Ruiwei and WU Zhengli Institute of Microelectronics,Tsinghua University,Beijing.A Study on the Impurity Profile and Threshold Calculation for MOSFETs with Double Implantations[J].Microelectronics,1997,27(2):121-124. |
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| Authors: | WANG Jimin JIANG Zhi LI Ruiwei and WU Zhengli Institute of Microelectronics Tsinghua University Beijing |
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| Affiliation: | WANG Jimin,JIANG Zhi,LI Ruiwei and WU Zhengli Institute of Microelectronics,Tsinghua University,Beijing 100084 |
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| Abstract: | For double channel implantations with different depths, different contributions of the implanted impurities during oxide diffusion to the surface concentrations are studied in the paper. An oxide increase factor of diffusion coefficient, an oxide attenuation factor of impurity and an effective impurity factor have been taken for diffusions of the double implanted imputities. Analogic equations of relationship between surface concentration and process parameters are given. Based on these equations, the threshold voltage of the MOSFET is calculated with the peak concentration in the body as strong inversion condition in the channel surface. |
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| Keywords: | Semiconductor device MOSFET Semiconductor process Ion implantation Threshold voltage |
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