氧分压对低温反应热蒸发制备ITO薄膜性能的影响

采用反应热蒸发法制备ITO薄膜,详细研究了氧分压对薄膜的晶体结构及光电性能的影响。当氧分压较小时,在XRD谱中发现了对应于SnO(112)晶向的衍射峰,随着氧分压的增大,薄膜的晶体结构变得完整,性能得到了改善,在较低的衬底温度下(TS=160℃)获得最小的电阻率为5.3×10-4Ωcm,但是,当更多的氧进入薄膜后一方面填充了氧空位,另一方面与Sn4+相结合形成复合中性粒子(Sn+In)2O"i,使得锡的掺杂作用减弱,薄膜的电阻率增大,同时在近红外区域的透过率增大。

Effect of oxygen partial pressure on properties of ITO films deposited by reactive thermal deposition technique

Microstructural,optical and electrical properties of tin doped indium oxide films prepared by reactive thermal deposition technique at different oxygen partial pressure were investigated in detail.When the pressure was relatively lower,(112)peak of SnO was observed in XRD spectra.With the temperature increasing,the crystal structure became integrated,and the properties were improved.The minimum resistivity of 5.3×10-4 Ωcm was obtained at a lower temperature of 160 ℃.However,when the oxygen partial pressure was higher,the oxygen in the films may fill into the oxygen vacancy,and it can also combine with the nearby Sn4+ to form a kind of neutral particle(Sn+In)2O"i which can passivate the doping effect,so the resistivity increased.At the same time,the transmission in the near infrared region increased.