太赫兹扫描成像在高通量测量铜合金薄膜电导中的应用（特邀）

高通量制备与表征对将材料基因组方法应用于先进材料研发制造实践起着关键作用。针对基于材料基因工程的高通量实验技术应用，采用透射式太赫兹扫描成像方法，对样品密度为144个/片的铜合金薄膜材料芯片进行了高通量电导的快速、微区检测。基于Tinkham薄膜透射方程及Fresnel公式的太赫兹光谱成像表征技术，对不同组分含量铜合金薄膜的太赫兹测量结果与四探针测量数据比较，具有一致的趋势。通过太赫兹成像可以进行同一基底上 144个高通量组合铜合金样品点电导的半定量比较。对代表性样品点的电导变化趋势与合金组分含量变化趋势，以及微观组织形貌进行分析比较得到相关对应关系，显示出太赫兹检测方法用于微区高通量金属薄膜电导表征方面的巨大潜力，显著提升研发效率。

Application of terahertz mapping in high throughput measurement of the electrical conductance of Cu alloy thin films (Invited)

High throughput materials fabrication and characterization techniques are key to the transformation from materials genome approach to advanced materials R&D and manufacturing practice. Here the authors reported the application of the terahertz (THz-TDS) mapping of the electrical conductance of Cu alloy sample matrix fabricated using high throughput solid state synthesis method. Fast detection of 144 Cu alloy thin films on a single materials library chip were achieved. The mapping technique was based on an algorithm derived from Tinkham equations and Fresnel formula. The THz conductance acquired from alloy thin films of either uniform or continuous gradient thickness agreed semi-quantitatively with those determined with four-probe method. Distinctive conductance differences among the 144 Cu alloy samples were obtained within one batch. Further analysis of the changing trends in the microstructures and semi-quantitative compositions of representative samples against their electrical conductance revealed a clear composition-structural-function relationship. This study demonstrated that THz-TDS may be a powerful tool for fast high throughput screening of Cu alloy materials library chip, and facilitate the R&D procedure substantially.