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PROGRESS IN ION BEAM ANALYSIS AT FUDAN UNIVERSITY
引用本文:杨福家,汤家镛. PROGRESS IN ION BEAM ANALYSIS AT FUDAN UNIVERSITY[J]. 核技术(英文版), 1990, 0(Z1)
作者姓名:杨福家  汤家镛
作者单位:Fudan University Shanghai 200433 China,Fudan University Shanghai 200433 China
摘    要:
Progres in ion beam analysis at Fudan University in the recent years is briefly reviewed. Presented as examples of the research activities performed in this field are the following projects: (1) Nuclear potential resonance scattering of 6.25 MeV and 4.25 MeV helium ions for simultaneous compositional analysis of carbon and oxygen in a Mylar, a SnInO, and some other film samples: (2) Determination of stoichiometry of a high-temperature superconducting Y-Ba-Cu-O sample by backscattering of 8.8 MeV helium ions; (3) Backscattering and channeling analysis of multilayered structures periodically consisting of layers of pure Si and alternate layers of Ge and Si, grown on (100) Si substrates by molecular beam epitaxy: (4) Studies of surface structure of Al(100) by the use of MeV ions backscattering and channeling surface peak: and (5) MeV ion microbeam analysis and the use of PIXE method in DNA study. etc.


PROGRESS IN ION BEAM ANALYSIS AT FUDAN UNIVERSITY
Yang Fujia Tang Jiayong. PROGRESS IN ION BEAM ANALYSIS AT FUDAN UNIVERSITY[J]. , 1990, 0(Z1)
Authors:Yang Fujia Tang Jiayong
Abstract:
Progres in ion beam analysis at Fudan University in the recent years is briefly reviewed. Presented as examples of the research activities performed in this field are the following projects: (1) Nuclear potential resonance scattering of 6.25 MeV and 4.25 MeV helium ions for simultaneous compositional analysis of carbon and oxygen in a Mylar, a SnInO, and some other film samples: (2) Determination of stoichiometry of a high-temperature superconducting Y-Ba-Cu-O sample by backscattering of 8.8 MeV helium ions; (3) Backscattering and channeling analysis of multilayered structures periodically consisting of layers of pure Si and alternate layers of Ge and Si, grown on (100) Si substrates by molecular beam epitaxy: (4) Studies of surface structure of Al(100) by the use of MeV ions backscattering and channeling surface peak: and (5) MeV ion microbeam analysis and the use of PIXE method in DNA study. etc.
Keywords:Ion beam analysis Non - Rutherford backscattering Channeling analysis of superlattice Surface structure study MeV ion microbeam system
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