Peculiarities of the long-range effects in GaAs-Based transistor structures upon combined irradiation with ions of various masses

Anomalous distinctions in the depth profiles of charge carrier density in the active regions of GaAs-based structures were observed for samples irradiated from the rear side (through substrate) with molecular hydrogen and argon ions either separately or in a certain combined sequence. The maximum effect of ion irradiation was observed in the structures characterized by increased density of defects in the buffer layer. The experimental results are explained by reconstruction of the impurity-defect complexes at the layer interfaces under the action of elastic waves arising both as a result of relaxation of the atomic displacement peaks in the ion stopping zone and due to the reverse piezoelectric effect.