The physical reason for the apparently low deposition rate during high-power pulsed magnetron sputtering |
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Authors: | Jens Emmerlich Stanislav Mráz Rony Snyders Kaiyun Jiang Jochen M Schneider |
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Affiliation: | Materials Chemistry, RWTH Aachen University, Kopernikusstr. 16, D-52074 Aachen, Germany |
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Abstract: | In high-power pulsed magnetron sputtering, a large power density is applied giving rise to a high degree of ionization. From an application point of view, the major drawback of this technology is the considerably lower deposition rate as compared to DC magnetron sputtering. Using transport-of-ions-in-matter simulations, we show that the apparently low deposition rate can be understood based on the non-linear energy dependence of the sputtering yields. Our calculations are consistent with deposition-rate measurements on Cu films as well as with published deposition-rate data for Ti Konstantinidis S, Dauchot JP, Ganciu M, Ricard A, Hecq M. J Appl Phys 2006;99:013307]. |
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Keywords: | Pulsed plasma Magnetron sputtering Deposition rate |
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