量子阱太赫兹探测材料设计与生长的研究*

子带跃迁的量子阱结构太赫兹探测器具有响应速度快等特点,有广泛的应用前景,越来越受到研究 人员的关注。以量子力学基本原理,量子阱结构材料光吸收的特性,以及光导型探测器暗电流分析为基础,进行了 量子阱厚度、势垒层Al 含量和量子阱掺杂浓度等参数的AlGaAs/ GaAs 量子阱太赫兹探测材料结构设计,按照优化 后的外延参数进行了材料生长,获得了符合设计要求的探测材料。

Study of Design and Growth on Quantum Well Structure Terahertz Material

Terahertz photon detectors have been demonstrated using intersubband transitions in semiconductor quan tum structures. Thecharacteristic of very fast time response of these semiconductor detectors make them attractive for many application. In this paper, many parameters of AlGaAs/ GaAs quantum well structure terahertz material, such as quantum well thickness, Al contents of AlGaAs barrier layer,dopant concentration of GaAs quantum well, absorption of quantum well material and dark current of photoconductive detector were designed on the basis of quantum mechanics. According to opti mized parameters, quantum well materialwas grown successfully, and the satisfied material was obtained.