| P埋层技术研究 |
| |
| 引用本文： | 廉亚光,郝景晨,郑晓光.P埋层技术研究[J].微纳电子技术,1994(6). |
| |
| 作者姓名： | 廉亚光 郝景晨 郑晓光 |
| |
| 作者单位： | ＣａＡｓＩＣ国家重点实验室 |
| |
| 摘 要： | 介绍了在Ｓｉ￣＋注入的ｎ－ＧａＡｓ沟道层下面用Ｂｅ￣＋或Ｍｇ￣＋注入以形成ｐ埋层。采用此方法做出了阈值电压０～０．２Ｖ，跨导大于１００ｍＳ／ｍｍ的Ｅ型ＧａＡｓＭＥＳＦＥＴ，也做出了夹断电压－０．４～－０．６Ｖ、跨导大于１００ｍＳ／ｍｍ的低阈值Ｄ型ＧａＡｓＭＥＳＦＥＴ。
|
| 关 键 词： | p埋层，砷化镓，增强型场效应管，低阈值耗尽型场效应管 |
Technical Research of p Buried Layer |
| |
| LianYaguang,Hao Jingchen,Zheng Xiaoguang.Technical Research of p Buried Layer[J].Micronanoelectronic Technology,1994(6). |
| |
| Authors: | LianYaguang Hao Jingchen Zheng Xiaoguang |
| |
| Abstract: | A p buried layer formed by implanting Be￣+or Mg￣+ in n-GaAs chan-nel layer with Si￣+ implantation is presented. Using this method, we have ma-nufactured E type GaAs MSEFET with its threshold voltage of 0～0. 2V, and transconductance greater than 100mS/mm.A low threshold D type GaAs MESFET with pinch voltage of-0.4～-0. 6V and transconductance greater than 100mS/mm has been achieved. |
| |
| Keywords: | p buried layer GaAs E-MESFET D-MESFET |
| 本文献已被 CNKI 等数据库收录！ |
