| 纳米级掺杂超晶格的生长及其性质研究 |
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| 引用本文： | 崔立奇,张文俊.纳米级掺杂超晶格的生长及其性质研究[J].微纳电子技术,1996(4). |
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| 作者姓名： | 崔立奇 张文俊 |
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| 作者单位： | 电子部第１３研究所 |
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| 摘 要： | 评述了制备纳米级掺杂超晶格材料的ＭＢＥ技术，给出了材料性能和器件研制结果。从微结构设计出发，研究了平面掺杂ＧａＡｓ／Ａｌ（Ｇａ）Ａｓ超晶格结构二维电子气有关性质，实验研究取得了重要的进展。
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| 关 键 词： | 分子束外延，平面掺杂，二维电子气，超晶格器件 |
Properties and Growing Investigation of the Nanometer-Size δ-Doped GaAs/Al(Ga) As Superlattices |
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| Cui-Liqi, Zhang Wenjun.Properties and Growing Investigation of the Nanometer-Size δ-Doped GaAs/Al(Ga) As Superlattices[J].Micronanoelectronic Technology,1996(4). |
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| Authors: | Cui-Liqi Zhang Wenjun |
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| Abstract: | This paper reviews the MBE techniques to produce nanometer-size δ-doping superlattices materias. The characteristics of the material and results of devices are given. The 2DEG Properties about the Plane-doping GaAs/Al (Ga) As superlattices are studied from the microstructure design, and the important progress in made about the experimental researches. |
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| Keywords: | MBE Plane-doping 2DEG Superlattice device |
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