| Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2／Ar Plasma |
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| 作者姓名： | HONG Ting ZHANG Yong-gang LIU Tian-dong |
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| 作者单位： | State Key Lab.of Function.Mater.for Inform.，Shanghai Institute of Microsyst. and Inform.Technol.，CASs，Shanghai，200050，CHN |
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| 基金项目： | 国家高技术研究发展计划(863计划)，国家重点基础研究发展计划(973计划)，国家自然科学基金 |
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| 摘 要： | Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl_2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/min) were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.
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| 关 键 词： | Ⅲ - Ⅴ compounds |
| 收稿时间： | 2004/2/25 |
Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2/Ar Plasma |
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| HONG Ting,ZHANG Yong-gang,LIU Tian-dong.Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2/Ar Plasma[J].Semiconductor Photonics and Technology,2004,10(3):203-207. |
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| Authors: | HONG Ting ZHANG Yong-gang LIU Tian-dong |
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| Abstract: | Reactive ion etching characteristics of GaAs,GaSb, InP and InAs using Cl2/Ar plasma have been investigated, it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power. Etch rates of above 0.45 μm/rin and 1.2 μm/rin have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (＜40 nm/rin) were observed in etching of In-containing materials,which were linearly increased with the applied RF power. Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance. |
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| Keywords: | Reactive ion etching Plasma |
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