Thermal stability of IGBT high-frequency operation |
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| Authors: | Sheng K. Finney S.J. Williams B.W. |
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| Affiliation: | Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh; |
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| Abstract: | Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBTs at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits |
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