Property improvement of multilayer TiN/Ti films with C+ implantation |
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Authors: | Zhiyong Zhao Tonghe Zhang Hong Liang Huixing Zhang Xiaoji Zhang |
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Affiliation: | (1) Institute of Low Energy Nuclear Physics, Radiation Beam and Materials Engineering Laboratory, Beijing Normal University, 100875 Beijing, China |
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Abstract: | Using the MEVVA ion source, carbon ions have been implanted in TiN coatings deposited by multiarc ion plating. The Vickers
microhardness of the C+-implanted TiN films increased with the increase in the ion flux and dose. X-ray diffraction (XRD) analysis showed that the
TiC phases had been formed in the films. In addition, the films had the preferred growth orientations of TiN and TiC, both
of which were (111) orientation after annealing at 500°C for 30 min. Auger electron spectra analysis indicated that C+-implanted profile was in typical Gaussian-like distribution in single films. The distribution with multipeaks of C atoms
was obtained in multi-layer TiN/Ti. The possibility of the multilayer films (Ti(C,N)/TiN/Ti(C,N)/TiN and Ti(C,N)/TiC/Ti(C,N)/TiC)
forming using the C-implanted TiN/Ti films is presented for the first time.
Project supported by the National Natural Science Foundation of China and the “863” Hi-Tech Program of China. |
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Keywords: | MEVVA ion implantation C ion implantation TiN multilayer films phase transition hardening mechanism |
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