| Abstract: | A new structure of a thin resistive film based on NiCr with a temperature coefficient of resistance (TCR) close to zero is described. The resistor is formed from two nitrogen-doped NiCr films with a sputtered aluminium film between them. This structure, deposited on glass or alumina substrates, has a sheet resistance of 100 Ω, a TCR value less than ±10×10−6K−1, low tracking of the TCR on the individual substrates and high long-term stability of the sheet resistance. The deposition process is characterized by high reproducibility of electrical properties. The surface and bulk chemical composition of the films have been monitored by secondary ion mass spectrometry and electron spectroscopy for chemical analysis. |
