The application of flip-chip bonding interconnection technique on the module assembly of 10 Gbps laser diode |
| |
Authors: | Haksoo Han Hyunsoo Chung Yung-Il Joe Seongsu Park Gwangchong Joo Nam Hwang Minkyu Song |
| |
Affiliation: | (1) Department of Chemical Engneering, Yonsei University, 134 Shinchon-Dong, Seodaemoon-Gu, 120-749 Seoul, Korea;(2) Compound Semiconductor Department, Electronics and Telecommunication Research Institute, 161 Kajong-Dong, Yusong-Gu, 305-350 Taejon, Korea |
| |
Abstract: | Flip chip bonding technique using Pb/In solder bumps was applied to packaging of a 10 Gbps laser diode (LD) submodule for
high speed optical communication systems. The effect of the flip-chip bonding interconnection technique instead of conventional
wire bonding was investigated for high speed broad band devices. The broad band performance of 10 Gbps LD submodule was simulated
using SPICE S/W and compared with experimental results. In this simulation, the 10 Gbps LD was modeled in a parallel RC circuit.
The values of R and C used for the equivalent circuit were 5ω and 1 pF, respectively. The LD was placed in series with a 18ω
thin film resistor to prevent the impedance mismatch between the LD and a 25ω transmission line. The dependence of parasitic
parameters on the small signal modulation bandwidth and the scattering parameters of the LD submodule was investigated and
analyzed up to 20 GHz. A small signal modulation bandwidth of 14 GHz at 10 mA dc bias current and the clean modulation response
up to 20 GHz were found for the flip-chip bonded submodule. The bandwidth of flip-chip bonded 10 Gbps LD submodule is wider
than that of the wire-bonded LD submodule by a difference of 3.8 GHz. |
| |
Keywords: | Bandwidth flip chip bonding laser diode solder bumps |
本文献已被 SpringerLink 等数据库收录! |
|