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Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability |
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| Authors: | S. Cassette S. L. Delage E. Chartier D. Floriot M. A. Poisson J. C. Garcia C. Grattepain J.Mimila Arroyo R. Plana S. W. Bland |
| Affiliation: | a Thomson CSF/LCR, Groupe Composants Electroniques, Domaine de Corbeville, 91404 Orsay Cedex, France b CNRS–LPSC, 92190 Meudon, France c Epitaxial Products International Ltd., Pascal Close, Cypress Drive, St Mellons, Cardiff, South Glamorgan CF3 OEG, Wales, UK |
| Abstract: | We report the result of investigation on hydrogen effects on GaInP/GaAs HBT structures originating from different MOCVD and CBE suppliers. It is demonstrated that hydrogen gives rise to initial unstable electrical behaviour by cross-examination of samples with and without hydrogen either intrinsically or by thermal-assisted removal. Annealing conditions to remove hydrogen have been optimized on the basis of SIMS analyses and Gummel plot characteristics to control eventual degradation of the junctions. It has been found that under particular doping and growth conditions, C2---H complexes can be formed. These defects appear more stable than C---H complexes which may explain the difficulty to remove hydrogen from some epitaxial layers. |
| Keywords: | Hydrogen-related effects GaInP/GaAs HBT structures Carbon doping |
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