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Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals
Authors:Rashid  Dallaev  Stach  Sebastian  Ţălu  Ştefan  Sobola  Dinara  Méndez-Albores  Alia  Córdova  Gabriel Trejo  Grmela  Lubomír
Affiliation:1.Faculty of Electrical Engineering and Communication, Physics Department, Brno University of Technology, Technická 8, 616 00, Brno, Czech Republic
;2.Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, University of Silesia, Będzińska 39, 41-205, Sosnowiec, Poland
;3.The Directorate of Research, Development and Innovation Management (DMCDI), The Technical University of Cluj-Napoca, Constantin Daicoviciu Street, no. 15, 400020, Cluj-Napoca, Cluj county, Romania
;4.Centro de Química-ICUAP Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria Puebla, 72530, Puebla, Mexico
;5.Center of Research and Technological Development in Electrochemistry (CIDETEQ), Parque Tecnológico Sanfandila, Pedro Escobedo, Querétaro, A.P. 064., C.P, 76703, Querétaro, Mexico
;
Abstract:Silicon - The purpose of this work is study of silicon single crystal wafer thermal stability in correlation with three-dimensional (3D) surface characterization using atomic force microscopy...
Keywords:
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