| Abstract: | Disorder is introduced into GaAs by implantation of 30Si+ ions, using a very wide range of ion doses, and studied by Raman scattering (RS) and Rutherford backscattering and ion channeling (RBS). A comparative analysis of mechanisms influencing RS and RBS signals has been made. This analysis revealed that, due to different sensitivity of each method to various defect structures, it is possible to distinguish several different types of implantation induced disorder. RS results indicate that a second type of amorphous structure, having medium-range order, grows at the expense of the continuous-random-network structure, even at doses beyond the threshold for complete amorphization. |
