| 砷化镓扩散长度的变加速电压束感生电流法测量 |
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| 引用本文： | 王万年,李成基,李韫言. 砷化镓扩散长度的变加速电压束感生电流法测量[J]. 功能材料与器件学报, 2000, 6(4): 328-331 |
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| 作者姓名： | 王万年 李成基 李韫言 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 计算了变加速电压的速感生电流法测定扩散长度理论公式,并用电子探针和扫描电镜测量了各种ＧａＡｓ材料的扩散长度。
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| 关 键 词： | GaAs 扩散长度 加速电压 电子束感生电流 |
| 修稿时间： | 2000-07-14 |
Determination of diffusion length of GaAs by electron beam acceleration voltage scanning |
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| WANG Wan-nian,LI Cheng-ji,LI Yun-yan. Determination of diffusion length of GaAs by electron beam acceleration voltage scanning[J]. Journal of Functional Materials and Devices, 2000, 6(4): 328-331 |
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| Authors: | WANG Wan-nian LI Cheng-ji LI Yun-yan |
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| Abstract: | The numerical solution of steady state equation of electron beam induced current under different acceleration voltages for Schottky barrier structure have been calculated. The diffusion length of GaAs have been measured by electron probe and SEM. |
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| Keywords: | GaAs Diffusion length Electron beam induced current |
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