| 深亚微米隔离技术--浅沟槽隔离工艺 |
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| 引用本文： | 王新柱,徐秋霞,钱鹤,申作成,欧文. 深亚微米隔离技术--浅沟槽隔离工艺[J]. 半导体学报, 2002, 23(3): 323-329. DOI: 10.3969/j.issn.1674-4926.2002.03.019 |
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| 作者姓名： | 王新柱 徐秋霞 钱鹤 申作成 欧文 |
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| 作者单位： | 中国科学院微电子中心,北京,100029 |
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| 摘 要： | 研究了浅沟槽隔离(STI)工艺的各主要工艺步骤:沟槽的形成、沟槽顶角的圆滑、沟槽填充以及化学机械抛光平坦化.使用器件模拟软件Medici和Davinci分析了STI结构的隔离性能以及沟槽隔离MOSFET的Kink效应和反窄宽度效应.
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| 关 键 词： | 浅沟槽隔离 化学机械平坦化 Kink效应 反窄宽度效应 |
| 文章编号： | 0253-4177(2002)03-0323-07 |
| 修稿时间： | 2001-09-30 |
Shallow Trench Isolation Process for Deep Sub-Micron Technologies |
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| Wang Xinzhu,Xu Qiuxia,Qian He,Shen Zuocheng and Ou Wen. Shallow Trench Isolation Process for Deep Sub-Micron Technologies[J]. Chinese Journal of Semiconductors, 2002, 23(3): 323-329. DOI: 10.3969/j.issn.1674-4926.2002.03.019 |
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| Authors: | Wang Xinzhu Xu Qiuxia Qian He Shen Zuocheng Ou Wen |
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| Abstract: | Shallow trench isolation (STI) is adopted as a mainstream isolation method in the deep sub micron ULSI process.The processing techniques are presented in details to introduce the various steps in a STI flow:trench formation,corner rounding,trench fill,CMP planarization and post CMP cleaning.The isolation performance,Kink effect and inverse narrow width effect of the STI isolation structure are also analyzed with a 2 dimension device simulator,namely Medici and a 3 dimension device simulator,Davinci. |
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| Keywords: | shallow trench isolation chemical mechanical planarization Kink effect inverse narrow width effect |
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