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Performance Analysis of Gate-Stack Dual-Material DG MOSFET Using Work-Function Modulation Technique for Lower Technology Nodes
Authors:Das  Satish K  Nanda  Umakanta  Biswal  Sudhansu M  Pandey  Chandan Kumar  Giri  Lalat Indu
Affiliation:1.Department of Electronics and Communication Engineering, Silicon Institute of Technology, Bhubaneswar, Odisha, India
;2.School of Electronics Engineering, VIT-AP University, Inavolu, Beside AP Secretariat, Near Vijayawada, Andhra Pradesh, India
;3.Department of Electronics and Instrumentation Engineering, Silicon Institute of Technology, Bhubaneswar, Odisha, India
;4.Department of Electronics and Communication Engineering, NIT, Goa, Ponda, Goa, India
;
Abstract:Silicon - Short channel effects (SCEs) along with mobility degradation has a great impact on CMOS technology below 100 nm. These effects can be overcome by using gate and channel...
Keywords:
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