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A Comprehensive Investigation of Vertically Stacked Silicon Nanosheet Field Effect Transistors: an Analog/RF Perspective
Authors:Tayal  Shubham  Ajayan  J  Joseph  L M I Leo  Tarunkumar  J  Nirmal  D  Jena  Biswajit  Nandi  Ashutosh
Affiliation:1.SR University, Warangal, Telangana, India
;2.Karunya Institute of Technology and Sciences, Coimbatore, Tamilnadu, India
;3.Koneru Lakshmaiah Education Foundation, Vaddeswaram, AP, India
;4.NIT Kurukshetra, Kurukshetra, Haryana, India
;
Abstract:Silicon - In this article, the analog/RF performance of n-channel vertically stacked gate all around (GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D TCAD...
Keywords:
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