Carrier mobility in pentacene as a function of grain size and orientation derived from scanning transmission X-ray microscopy |
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| Authors: | Bjö rn Brä uer,Roopali Kukreja,Ajay Virkar,Hylke B. Akkerman,Andreas Fognini,Tolek Tyliszczak,Zhenan Bao |
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| Affiliation: | aStanford Institute of Materials and Energy Science, Stanford University, Stanford, CA 94305, USA;bDepartment of Chemical Engineering, Stanford University, Stanford, CA 94305, USA;cAdvanced Light Source, Berkeley, CA 94720, USA;dETH Zurich, Laboratory for Solid State Physics, 8093 Zürich, Switzerland |
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| Abstract: | Pentacene field-effect transistors were prepared on silicon nitride membranes for scanning transmission X-ray microscopy (STXM) investigations. The membranes were modified by different self-assembled monolayers (SAMs). Pentacene was deposited atop the SAM-treated membrane and the in-plane orientation of the grains were subsequently investigated by polarization dependent STXM measurements. The grain sizes were determined and compared to those obtained from atomic force microscopy (AFM) measurements. Statistical analysis of the grain orientation was correlated with the charge carrier mobility of the films, in which we observed an increase in the mobility with increasing grain size and decreasing surface roughness of the SAM. |
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| Keywords: | X-ray microscopy Pentacene STXM Grain |
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