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Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods |
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| Authors: | S. V. Morozov D. I. Kryzhkov V. I. Gavrilenko A. N. Yablonsky D. I. Kuritsyn D. M. Gaponova Yu. G. Sadofyev B. N. Zvonkov O. V. Vihrova |
| Affiliation: | 1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Nizhni Novgorod, 603950, Russia 2. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia 3. Research Institute of Physics and Technology, Nizhni Novgorod State University, pr. Gagarina 23/3, Nizhni Novgorod, 603950, Russia |
| Abstract: | The type of heterojunction in the GaAs1 ? x Sb x /GaAs heterostructure at x = 0.36 is studied by photoluminescence spectroscopy and time-resolved photoluminescence. A GaAsSb/GaAs heterostructure with an Sb fraction of 15%, for which we can confidently state is a type-I heterojunction, was studied for comparison. It was established from the blue shift of the photoluminescence line depending on the excitation power and relaxation time of the photoluminescence signal from the GaAs1 ? x Sb x /GaAs quantum well, which was ??11 ns, that the GaAs1 ? x Sb x /GaAs structure at an Sb content of 36% clearly constitutes a type II heterojunction. This was additionally evidenced by the data obtained for structures with an Sb content of 15%, in which case no shift of the location of the photoluminescence line on the pump power was observed, while the relaxation time of photoluminescence in the region of the signal from the quantum well was ??1.5 ns. |
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