The effect of grain boundaries on the electrical properties of zinc oxide-based varistor |
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Authors: | Shr-Nan Bai Tseung-Yuen Tseng |
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Affiliation: | (1) Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan, R.O.C. |
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Abstract: | The ac response of ZnO-based varistors was measured as a function of temperature and applied electric field. Conductivity-frequency
measurements indicated that the grain boundaries of the ZnO varistors were amorphous. The device resistance was found to decrease
as the temperature/applied field increased. This was attributed to deterioration of the insulating property of the grain boundaries
due to generation of conduction carriers in the ZnO grains. As a large amount of these charge carriers passed through the
grain boundaries, the ZnO varistors remarkably revealed a non-Debye characteristic that can be modeled by a capacitance to
simulate the behavior of the grain boundaries. |
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Keywords: | ZnO varistor Grain boundary Ac response |
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