Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors |
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| Affiliation: | 1. Institute of Computing Science and Technology, Guangzhou University, Guangzhou, 510006, China;2. Department of Mechanical Engineering, Virginia Tech, Blacksburg, VA, 24060, USA;3. Department of Mechanical Engineering, Estahban Branch, Islamic Azad University, Estahban, Iran;4. Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, OH, USA;1. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados (IITEMA), CONICET, Departamento de Química, Facultad de Ciencias Exactas Fisicoquímicas y Naturales, Universidad Nacional de Río Cuarto, Ruta Nac. 36, Km 601, Río Cuarto, Córdoba, Argentina;2. Universidad Nacional de Ingeniería. Av. Tupac Amaru 210, Rimac, Lima 25, Peru;3. Centro Atómico Bariloche, 8400 e S.C. de Bariloche, Argentina;1. Guangzhou Key Laboratory of Environmental Catalysis and Pollution Control, School of Environmental Science and Engineering, Institute of Environmental Health and Pollution Control, Guangdong University of Technology, Guangzhou 510006, China;2. Guangzhou University-Linköping University Research Center on Urban Sustainable Development, Guangzhou University 510006 Guangzhou, China;3. Institute of Environmental Engineering, National Sun Yat-sen University, Gaoxiong 80424, Taiwan;4. Department of Environmental Science and Engineering, Tunghai University, Taichung 40704, Taiwan;5. Department of Civil Engineering, National Chi Nan University, Nanto 54561, Taiwan;1. School of Chemistry and Chemical Engineering, Shandong University of Technology, Zibo 255049, PR China;2. School of Chemistry and Life Science, Anshan Normal University, Anshan 114007, PR China;1. State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, PR China;2. School of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, 414006, PR China;3. School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai, 200240, PR China |
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| Abstract: | In this article, the hydrogen sensing characteristics of Al0.25Ga0.25In0.5P/In0.1Ga0.9As enhancement/depletion-mode co-integrated pseudomorphic doping-channel field-effect transistors by wet selectively etching process are demonstrated. At drain current of 0.1 mA/mm, the threshold voltages are of −0.97 (+0.6) V and −1.22 (+0.31) V in air and at hydrogen concentration of 9800 ppm, respectively, for the depletion (enhancement)-mode device. In addition, by employing the co-integrated FETs the transfer characteristics of the direct-coupled FET logic (DCFL) obviously vary under hydrogen ambience. The VOH value reduces and the VOL value increases in the DCFL with the measurement of hydrogen detection. |
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| Keywords: | Hydrogen sense AlGaInP/InGaAs Enhancement/depletion-mode Doping-channel field-effect transistor Threshold voltage Direct-coupled FET logic |
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