Influence of arsenic on the atomic structure of the Si(112) surface |
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Authors: | Daniel H Zavitz Alexandra Evstigneeva Rasdip Singh Chad Fulk Michael Trenary |
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Affiliation: | (1) Department of Chemistry, University of Illinois at Chicago, 60607 Chicago, IL;(2) Department of Physics, University of Illinois at Chicago, USA |
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Abstract: | The surface science techniques of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and scanning
tunneling microscopy (STM) have been used to characterize the clean Si(112) surface and the influence of an As monolayer on
the properties and structure of the surface. In agreement with previous studies, the clean surface is found by both LEEd and
atomically resolved STM images to be unstable with respect to faceting into other stable planes. Procedures for in-situ deposition of As onto clean Si surfaces were devised and XPS results show that approximately one monolayer of As can be deposited
free of any contamination. The As/Si(112) surface is characterized by a sharper LEED pattern than for the clean surface and
by STM images characterized by long rows along the
direction with a regular width of 1.9 nm. This is consistent with a doubling of the periodicity in the
direction of the bulk-terminated unit cell. This implies that As yields a stable but reconstructed Si(112) surface. |
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Keywords: | Si(112) Ag/Si low-energy electron diffraction (LEED) x-ray photoelectron spectroscopy (XPS) scanning tunneling microscopy (STM) |
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