Island size distribution under conditions of dislocation-surface diffusion in semiconductor heterostructures |
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| Authors: | R. D. Vengrenovich A. V. Moskalyuk S. V. Yarema |
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| Affiliation: | (1) Fed’kovich State University, ul. Kotsyubinskogo 2, Chemovtsy, 58012, Ukraine |
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| Abstract: | ![]()
A mechanism of Ostwald ripening of islands under conditions of dislocation-surface diffusion is suggested for semiconductor heterostructures with quantum dots. The island size distribution is calculated for the suggested growth mechanism. Experimental histograms are compared with calculated curves. |
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