一种新型CMOS电流模带隙基准源的设计

设计了一种新型电流模带隙基准源电路和一个3bit的微调电路。该带隙基准源可以输出可调的基准电压和基准电流,避免了在应用中使用运算放大器进行基准电压放大和利用外接高精度电阻产生基准电流的缺点,同时该结构克服了传统电流模带隙基准源的系统失调、输出电压的下限限制以及电源抑制比低等问题。该带隙基准源采用0.5μm CMOS混合信号工艺进行实现,有效面积450μm×480μm;测试结果表明在3 V电源电压下消耗1.5mW功耗,电源抑制比在1 kHz下为72dB,当温度从-40～85°C变化时,基准电压的有效温度系数为30×10-6V/°C。该带隙基准电路成功应用在一款高速高分辨率模数转换器电路中。

Design of a Novel CMOS Current Mode Bandgap Reference

A novel CMOS bandgap reference and an on-chip 3-bit trimming circuit is presented.The output reference voltage and current can be set to an a variable value,which can avoid employing an operarional amptifier and an off-chip precise resistor in the application.It also overcomes the systematic mismatch,output voltage bottom limitation and low PSRR of conventional current mode bandgap references.The proposed bandgap reference has been implemented in 0.5 μm CMOS mixed mode technology,the effect area is 450 μm×480 μm.The test results show that it has a 1.5 mW of power under the supply of 3 V,72 dB @ 1 kHz of PSRR,and temperature coefficient of 30×10-6V/°C from-40°C to 85°C.It has been used in the high speed high resolution ADC circuit.