Thermoelectric Properties of Mo3Sb5.4Te1.6 and Ni0.06Mo3Sb5.4Te1.6 |
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| Authors: | Huqin Zhang Jian He Bo Zhang Zhe Su Terry M. Tritt Navid Soheilnia Holger Kleinke |
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| Affiliation: | (1) Department of Physics and Astronomy, Clemson University, Clemson, South Carolina, USA;(2) Department of Chemistry, University of Waterloo, N2L 3G1 Waterloo, ON, Canada |
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| Abstract: | Mo3Sb7, crystallizing in the Ir3Ge7 type structure, has poor thermoelectric (TE) properties due to its metallic behavior. However, by a partial Sb-Te exchange, it becomes semiconducting without noticeable structure changes and so achieves a significant enhancement in the thermopower with the composition of Mo3Sb5Te2. Meanwhile, large cubic voids in the Mo3Sb5Te2 crystal structure provide the possibility of filling the voids with small cations to decrease the thermal conductivity by the so-called rattling effect. As part of the effort to verify this idea, we report herein the growth as well as measurements of the thermal and electrical transport properties of Mo3Sb5.4Te1.6 and Ni0.06Mo3Sb5.4Te1.6. |
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| Keywords: | Crystal structure electronic band structure thermoelectric (TE) properties |
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