典型CMOS器件总剂量加速试验方法验证

应用美军标试验方法1019．5和1019．4分别对两种典型（Complementary Metal-Oxide—Semiconductor Transistor，CMOS）器件进行试验验证，论述了试验原理，对试验现象进行了详细的分析，了解实验室条件下评估空间氧化物陷阱电荷和界面陷阱电荷的可行性和保守性。实验表明，两种不同工艺的CC4069器件没有通过1019．5所做出的试验验证，从实验现象观察认为是由于界面陷阱电荷大量建立所引起的。加固LC4007-RHA NMOS却通过了与1019．5相比过分保守的1019．4的试验验证。

Total dose accelerated test method to validate typical CMOS devices

MIL?STD 883 Test Method 1019.5 and 1019.4 are respectively applied to test and validate typical CMOS devices of CC4069 (manufactured in two different technologies) and LC4007-RHA. Principles for the tests are given and test results are analyzed in detail, so as to realize under laboratory conditions the feasibilities and con- servatisms of eatimating oxide trap charges and interface trap charges in space. The studies shows that, while the LC4007-RHA NMOS device passed the comparatively conservative 1019.4 tests, CC4069 devices failed in the 1019.5 tests, suggesting considerable interface trap charge build-up after high temperature annealing.