AlGaN/GaN HEMT小信号模型参数提取算法

本文采用了新型的22元件AlGaN/GaN HEMT小信号等效电路模型，较传统的模型，增加了栅漏电导Ggdf和栅源电导Ggsf来表征GaN HEMT的栅极泄漏电流。同时针对新型的栅场板、源场板结构器件，提出了一种改进的寄生电容参数提取方法,使之适用于提取非对称器件的小信号模型参数。为验证此模型，获得了S参数的测试结果和模型仿真结果，此二者的吻合度较高，表明新型的22元件小信号模型精确、稳定而且物理意义明确。

Small-signal model parameter extraction for AlGaN/GaN HEMT

A new 22-element small signal equivalent circuit model for the AlGaN/GaN high electron mobility transistor(HEMT) is presented. Compared with the traditional equivalent circuit model, the gate forward and breakdown conductions(G_gsf and G_gdf) are introduced into the new model to characterize the gate leakage current. Additionally, for the new gate-connected field plate and the source-connected field plate of the device, an improved method for extracting the parasitic capacitances is proposed, which can be applied to the small-signal extraction for an asymmetric device. To verify the model, S-parameters are obtained from the modeling and measurements. The good agreement between the measured and the simulated results indicate that this model is accurate, stable and comparatively clear in physical significance.