Optical, electrical and thermoelectric power studies of Al-Sb thin film bilayer structure

The III-V semiconductors are of great importance due to their applications in various electro-optic devices. The Al-Sb thin film was deposited on glass substrate by thermal evaporation method at a pressure of 10^-5 torr. The samples were annealed for 3 h at different constant temperatures in a vacuum chamber at a pressure of 10^-5 torr. The electrical resistance vs temperature studies show phase transformation from metallic to semiconducting. The observed positive thermoelectric power indicates that Al-Sb thin films arep-type in nature. The Rutherford back scattering analysis and optical band gap measurements also indicate that the inter-diffusion concentration varies with temperature.