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Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias |
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| Authors: | Xiao Wenbo He Xingdao Gao Yiqing Zhang Zhimin and Liu Jiangtao |
| Affiliation: | Key Laboratory of Non-Destructive Test of Ministry of Education, Nanchang Hangkong University, Nanchang 330063, China;Key Laboratory of Non-Destructive Test of Ministry of Education, Nanchang Hangkong University, Nanchang 330063, China;Key Laboratory of Non-Destructive Test of Ministry of Education, Nanchang Hangkong University, Nanchang 330063, China;Key Laboratory of Non-Destructive Test of Ministry of Education, Nanchang Hangkong University, Nanchang 330063, China;Department of Physics, Nanchang University, Nanchang 330031, China |
| Abstract: | The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions. An electroluminescence viewgraph shows the clear device structures, and the electroluminescence intensity is shown to increases exponentially with bias voltage and linearly with bias current. The results can be interpreted using an equivalent circuit of a single ideal diode model for triple-junction solar cells. The good fit between the measured and calculated data proves the above conclusions. This work is of guiding significance for current solar cell testing and research. |
| Keywords: | triple-junction solar cell electroluminescence characteristics |
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