| 空间低剂量率效应模拟方法研究 |
| |
| 引用本文： | 何宝平,王桂珍,龚建成,周辉,贺朝会. 空间低剂量率效应模拟方法研究[J]. 核电子学与探测技术, 2004, 24(4): 427-431 |
| |
| 作者姓名： | 何宝平 王桂珍 龚建成 周辉 贺朝会 |
| |
| 作者单位： | 西北核技术研究所,陕西西安69信箱13分箱,710024;西北核技术研究所,陕西西安69信箱13分箱,710024;西北核技术研究所,陕西西安69信箱13分箱,710024;西北核技术研究所,陕西西安69信箱13分箱,710024;西北核技术研究所,陕西西安69信箱13分箱,710024 |
| |
| 摘 要： | 一方面介绍了利用线性响应理论能够预估MOS器件空间低剂量率的辐射响应，并得出在相同偏压下，高剂量率辐照加室温退火所引起的阈值电压漂移量在误差允许的范围内等于低剂量率辐照的漂移量，两者总的时间相等；另一方面对美军标1019．4实验程序进行了重新评估，对氧化物陷阱电荷和界面态效应的评估方面给出了一些建议。
|
| 关 键 词： | 低剂量率 加速试验 退火 |
| 文章编号： | 0258-0934(2004)04-0427-04 |
| 修稿时间： | 2003-02-20 |
Research on simulation method of space low-dose-rate radiation response |
| |
| HE Bao-ping,WANG Gui-zhen,GONG Jian-cheng,ZHOU Hui,HE Chao-hui. Research on simulation method of space low-dose-rate radiation response[J]. Nuclear Electronics & Detection Technology, 2004, 24(4): 427-431 |
| |
| Authors: | HE Bao-ping WANG Gui-zhen GONG Jian-cheng ZHOU Hui HE Chao-hui |
| |
| Abstract: | MOS device in space low-dose radiation response can be predicted by using linear system theory techniques. According to the prediction result, under same bias conditions during radiation and anneal, the threshold-voltage shifts caused by high dose-rate irradiations following room temperature anneal were equal to that of low-dose-rate irradiations within the limits of error, but both total times were same. On the other hand, we re-evaluated the method 1019.4 test procedure. And some advice on evaluating the oxide trapped charge and interface trapped charge effect are given. |
| |
| Keywords: | low-dose-rate accelerate test anneal |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
