A method for measuring the shot noise in Schottky diodes with reduced barrier height

A method for measuring the spectral density of shot noise of one-port networks, in particular, semiconductor diodes, is described. The method is applicable at frequencies of up to 200 MHz. Expressions are obtained that relate the spectral density of the diode’s current noise to the measured noise factor and power gain of the diode fixture with the diode mounted in it. With this method, the dependence of the Fano factor of a GaAs Schottky diode with reduced barrier height on the diode current is determined.