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| 对称门极换向晶闸管的工作原理和设计技术 | |
| 引用本文： | 李双美. 对称门极换向晶闸管的工作原理和设计技术[J]. 电力电子技术, 2007, 41(10): 131-133 |
| 作者姓名： | 李双美 |
| 作者单位： | 沈阳工程学院,辽宁,沈阳,110136 |
| 摘 要： | 给出了一种大功率半导体器件--对称门极换向品闸管(SGCT),并对其动态特性和静态特性以及n基层的寿命控制进行了研究;提出了多能量质子寿命控制技术;采用一种改进的双向斜面来保证获得对称、稳定的高阻断电压,并对SGCT关断过程中的电流均匀性和功率损耗情况进行了仿真分析. |
| 关 键 词： | 电力半导体器件 晶闸管/对称门极换向晶闸管 |
| 文章编号： | 1000-100X（2007）10-0131-03 |
| 修稿时间： | 2007-05-17 |
Principle and Design of Symmetric Gate Commutated Turn-off Thyristor |
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| LI Shuang-mei. Principle and Design of Symmetric Gate Commutated Turn-off Thyristor[J]. Power Electronics, 2007, 41(10): 131-133 | |
| Authors: | LI Shuang-mei |
| Affiliation: | Shengyang Institute of Engineering, Shenyang 110136, China |
| Abstract: | A High-power semiconductor device called the Symmetric Gate Commutated Turn-off Thyristor(SGCT)is presented.The relation between dynamic and static characteristics of an SGCT and the local lifetime controlled position in the n-base layer are investigated.The multi-energy proton lifetime control technology is developed.The improved double-positive bevel is adopted for ensuring the high blocking symmetric voltage and its stability.The current and power dissipa-tion balances among unit cell in an SGCT ship during turn-off operation are analysed by simulation. |
| Keywords: | power semiconductor device thyristor/symmetric gate commutated turn-off thyristor |
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