Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend

Solution-based indium gallium zinc oxide (IGZO)/single-walled carbon nanotubes (SWNTs) blend have been used to fabricate the channel of thin film transistors (TFTs). The electrical characteristics of the fabricated devices were examined. We found a low leakage current and a higher on/off currents ratio for TFT with SWNTs compared to solution-based TFTs made without SWNTs. The saturation field effect mobility (μ_sat) of about 0.22 cm²/Vs, the current on/off ratio is ~ 10⁵, the subthreshod swing is ~ 2.58 V/decade and the threshold voltage (V_th) is less than − 2.3 V. We demonstrated that the solution-based blend active layer provides the possibility of producing higher performance TFTs for low-cost large area electronic and flexible devices.