| 纳米电子器件中的噪声及其应用研究 |
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| 引用本文： | 张志勇,王太宏.纳米电子器件中的噪声及其应用研究[J].微纳电子技术,2003,40(6):6-15. |
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| 作者姓名： | 张志勇 王太宏 |
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| 作者单位： | 中国科学院物理所,北京,100080 |
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| 摘 要： | 对多种纳米材料和纳米器件的噪声进行了比较详细的研究,对纳米器件中几种常用的噪声测量方法进行了探讨。讨论了利用噪声(主要是散粒噪声)进行介观电学机制探测的方法,并提出了用于解决单电子晶体管中背景电荷噪声的有效方法,揭示了双势垒共振隧穿二极管在负微分电阻区的散粒噪声大于Poisson值的本质。
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| 关 键 词： | 散粒噪声 1/f噪声 单电子晶体管 碳纳米管 量子点器件 共振隧穿器件 |
| 文章编号： | 1671-4776(2003)06-0006-10 |
The investigation of noise in nanoelectronic devices and its application |
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| ZHANG Zhi-yong,WANG Tai-hong.The investigation of noise in nanoelectronic devices and its application[J].Micronanoelectronic Technology,2003,40(6):6-15. |
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| Authors: | ZHANG Zhi-yong WANG Tai-hong |
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| Abstract: | The noises in nanomaterials and nanoelectronic devices are analyzed,and their mea-surements are discussed.Shot noise measurement can be used as a tool to probe electronic pro-perties in mesoscopic systems.An effective method is invented to solve the background charge noise in single-electron transistor.Shot noise in the region of the negative differential resistance is larger than Poisson value in double barrier resonance diodes. |
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| Keywords: | shot noise 1/f noise single-electron transistor carbon nanotube quantum dot de-vice resonance tunneling device |
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