| CHN薄膜的制备 |
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| 引用本文： | 李常明,陈志梅,吴卫东,唐永建. CHN薄膜的制备[J]. 原子能科学技术, 2005, 39(2): 176-178 |
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| 作者姓名： | 李常明 陈志梅 吴卫东 唐永建 |
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| 作者单位： | 中国工程物理研究院,激光聚变研究中心,四川,绵阳,621900 |
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| 基金项目： | 国家804惯性约束聚变领域资助课题(0344020) |
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| 摘 要： | 文章简要描述了空心阴极等离子体化学气相沉积(HPCVD)的原理，以及用HPCVD方法制备CHN薄膜的工艺和实验结果。用XPS和AFM分别分析了CHN薄膜中C和N的成分及表面形貌，并得到了一定条件下的薄膜沉积速率。
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| 关 键 词： | 制备 薄膜沉积 工艺 XPS 成分 表面形貌 AFM 等离子体化学气相沉积 速率 条件 |
| 文章编号： | 1000-6931(2005)02-0176-03 |
Preparation of the CHN Film |
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| LI Chang-ming,CHEN Zhi-mei,WU Wei-dong,TANG Yong-jian. Preparation of the CHN Film[J]. Atomic Energy Science and Technology, 2005, 39(2): 176-178 |
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| Authors: | LI Chang-ming CHEN Zhi-mei WU Wei-dong TANG Yong-jian |
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| Abstract: | In the paper, the principle of hollow cathode plasma chemical vapor deposition(HPCVD) is expounded briefly. The CHN films have been produced on quartz substrate using hollow cathode plasma CVD method with CH_(4) and NH_(3)/H_(2) source. The surface configuration and the distribution of component were measured and analysed by AFM and XPS. And the aggradation velocity was also obtained under some conditions. |
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| Keywords: | hollow cathode plasma chemical vapor deposition CHN film XPS |
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