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Far infrared optical properties of amorphous semiconductors As−S systems
Authors:T. Arai  S. Onari  K. Matsuishi  H. Yasuoka
Affiliation:1. Institute of Applied Physics, University of Tsukuba, 305, Sakura; Ibaraki, Japan
Abstract:
Far infrared reflection, Raman, and Brillouin spectra of amorphous semiconductor As?S systems are measured. From the reflection spectra, the optical constants are calculatured by the Kramers Kronig analysis. The existence of some intermediate range interaction among molecular units AsS3 is suggested. From the analysis of the Boson peak at low frequency region in Raman scattering, the correlation length is obtained to be ca. 6 Å. From the absorption coefficient in the low frequency region about 3% fluctuation of charge is suggested for As2S3 by schlömann theory.
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